Description
HTS50-12
Fast High-Voltage Semiconductor Switch, 5KV
The HTS50-12 is a fast high-voltage semiconductor switch designed for high-voltage, high-speed switching applications such as Pockels cell drivers, deflection grid drivers, and nanosecond pulse generators. It is intended for short-pulse applications requiring very fast rise times and high peak currents. Compared to traditional high-voltage switches like cold cathode tubes, triggered spark gaps, or thyratrons, the HTS50-12 offers very short recovery times, high repetition rates, very low jitter, and a long service life. Operation requires neither a trigger transformer nor high auxiliary voltages.
Key Specifications
| Working voltage range | 0–5000 VDC |
| Isolation strength | 10000 VDC |
| Max peak current (non-repetitive) | 200 A |
| Turn-on delay time | 60 ns (RL=100Ω, CL=30pF, Vo=4KV) |
| Rise time | Down to 3 ns with optimized circuit design |
| Typical on-time after triggering | 150 ns |
| Trigger pulse amplitude | 3–20 V (positive pulse) |
| Trigger level | 3.3–5.5 VDC |
| Trigger pulse width | 0.2–20 µs |
| Supply voltage | 4.75–5.25 VDC |
| Temperature range | -10°C to +60°C |
| Dimensions | 91 × 64 × 35 mm |
| Weight | 375 g |
Key Highlights
- Nanosecond-level rise time; very fast di/dt
- Low turn-on jitter characteristics
- Short delay time
- Excellent high-frequency characteristics
- Low trigger voltage
- Galvanic isolation exceeding 10KV DC — switches positive or negative voltages, floats at high potentials
- No trigger transformer or high auxiliary voltages required
Applications
- High-voltage pulse generators
- Pockels cell drivers
- Power tube drivers
- Deflection grid drivers
- Crowbar switch circuits
- EMC test equipment
- Radar modulators
- Laser electronics
Specifications per the HTS50-12 datasheet (SHR). Submit an RFQ to confirm configuration and availability.
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